savantic semiconductor product specification silicon npn power transistors 2SC2588 description with mt-200 package excellent safe operating area fast switching speed applications suited for high frequency power amplifiers, audio power amplifiers,switching regulators and dc-dc converters applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 130 v v ceo collector-emitter voltage open base 130 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC2588 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma; r be = 9 120 v v (br)cbo collector-base breakdown voltage i c =50a; i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50a; i c =0 5 v v ce (sat) collector-emitter saturation voltage i c =5 a;i b =0.5 a 1.8 v v be base-emitter voltage i c =5a ; v ce =5v 1.7 v i cbo collector cut-off current v cb =120v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =2a ; v ce =5v 60 200 h fe-2 dc current gain i c =7a ; v ce =5v 40 f t transition frequency i c =1a ; v cb =10v,f=1mhz 60 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 170 pf downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC2588 package outline fig.2 outline dimensions downloaded from: http:///
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